View IRF6645_394139.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 97006
IRF6645
DirectFET Power MOSFET
l l l l l l l l l
RoHs Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
4.8nC
RDS(on)
28m@ 10V
100V max 20V max
Vgs(th)
4.0V
14nC
SJ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN
DirectFET ISOMETRIC
Description
The IRF6645 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
80
Typical R DS (on) (m)
Max.
100 20 5.7 4.5 25 45 29 3.4
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS Pulsed Drain Current
g
e e @ 10V f h
12 10 8 6 4 2 0 0 4 ID= 3.4A
A
Single Pulse Avalanche Energy Avalanche CurrentAg
ID = 3.4A
mJ A
70 60 50 40 30 20 4
VDS = 80V VDS= 50V
TJ = 125C
TJ = 25C
6 8 10 12 14 VGS, Gate-to-Source Voltage (V)
16
8
12
16
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 5.0mH, RG = 25, IAS = 3.4A.
www.irf.com
1
8/5/05
IRF6645
Electrical Characteristic @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance
Min.
100 --- --- 3.0 --- --- --- --- --- 7.4 --- --- --- --- --- --- ---
---
Typ.
--- 0.12 28 --- -12 --- --- --- --- --- 14 3.1 0.8 4.8 5.3 5.6 7.2 1.0 9.2 5.0 18 5.1 890 180 40 870 100
Max.
--- --- 35 4.9 --- 20 250 100 -100 --- 20 --- --- 7.2 --- --- --- --- --- --- --- --- --- --- --- --- ---
Units
V V/C m V mV/C A nA S
Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 5.7A c VDS = VGS, ID = 50A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 3.4A VDS = 50V
nC
VGS = 10V ID = 3.4A See Fig. 15
nC
VDS = 16V, VGS = 0V VDD = 50V, VGS = 10V ID = 3.4A c
--- --- --- --- --- --- --- --- ---
ns
RG=6.2 VGS = 0V
pF
VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 80V, f=1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d --- --- --- --- 31 40 1.3 47 60 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- 45
Min.
---
Typ.
---
Max.
25
Units
A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IF = 3.4A, VDD = 50V di/dt = 100A/s c
G S D
TJ = 25C, IS = 3.4A, VGS = 0V c
Notes:
Pulse width 400s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com
IRF6645
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG
c c Power Dissipation f
Power Dissipation Power Dissipation Operating Junction and
Parameter
Max.
3.0 1.4 42 270 -40 to + 150
Units
W
Peak Soldering Temperature Storage Temperature Range
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
100
cg Junction-to-Ambient dg Junction-to-Ambient eg Junction-to-Case fg
Junction-to-Ambient
Parameter
Typ.
--- 12.5 20 --- 1.0
Max.
58 --- --- 3.0 ---
Units
C/W
Junction-to-PCB Mounted
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05
1
0.02 0.01
J J 1 1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 4
R5 R5 A C 5
Ri (C/W)
0.6677
C
i (sec)
0.000066 0.000896 0.004386 0.686180
1.0463 1.5612 29.2822
2
3
4
5
0.1
Ci= i/Ri Ci= i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1
25.4550 32 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x Zthja + Ta
1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu board (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
www.irf.com
3
IRF6645
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
10 6.0V
1
6.0V
60s PULSE WIDTH
Tj = 25C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 1 0.1 1
60s PULSE WIDTH
Tj = 150C 10 100
VDS , Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100 VDS = 10V
ID, Drain-to-Source Current ()
Fig 5. Typical Output Characteristics
2.0 ID = 5.7A
Typical RDS(on) (Normalized)
60s PULSE WIDTH 10
VGS = 10V
TJ = 150C TJ = 25C TJ = -40C
1.5
1
1.0
0.1 4.0 5.0 6.0 7.0 8.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
Fig 7. Normalized On-Resistance vs. Temperature
60 VGS = 7.0V VGS = 8.0V TA= 25C
C, Capacitance(pF)
(m)
Coss = Cds + Cgd
50
VGS = 10V VGS = 15V
1000
Coss 100
DS(on) Typical R
Ciss
40
Crss
30
10 1 10 VDS , Drain-to-Source Voltage (V) 100
20 0 10 20 30 40 50
ID, Drain Current (A)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current
4
www.irf.com
IRF6645
100.0
ID, Drain-to-Source Current (A)
1000
ISD , Reverse Drain Current (A)
TJ = 150C TJ = 25C 10.0 TJ = -40C
OPERATION IN THIS AREA LIMITED BY R DS (on) 100
100sec 10
1.0
1msec 1 TA = 25C Tj = 150C Single Pulse 0.1 1.0
VGS = 0V 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD , Source-to-Drain Voltage (V)
0.1
10msec
10.0
100.0
1000.0
VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
6.0
Fig11. Maximum Safe Operating Area
6.0
5.0
VGS(th) Gate threshold Voltage (V)
5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0
ID , Drain Current (A)
4.0
3.0
ID = 1.0A ID = 1.0mA ID = 250A ID = 50A
2.0
1.0
0.0 25 50 75 100 125 150
-75
-50
-25
0
25
50
75
100
125
150
TJ , Ambient Temperature (C)
TJ , Temperature ( C )
Fig 12. Maximum Drain Current vs. Ambient Temperature
120
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 1.5A 2.4A BOTTOM 3.4A
TOP
EAS, Single Pulse Avalanche Energy (mJ)
100
80
60
40
20
0 25 50 75 100 125 150
Starting TJ, Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
IRF6645
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
VDS VGS RG
RD
90%
D.U.T.
+
VDS
- VDD
10%
VGS
td(on) tr td(off) tf
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
www.irf.com
IRF6645
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, SJ Outline (Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
D G D G = GATE D = DRAIN S = SOURCE
S S
D
D
www.irf.com
7
IRF6645
DirectFET Outline Dimension, SJ Outline (Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.62 E 0.58 0.62 F 0.58 0.72 G 0.68 0.72 H 0.68 K 0.98 1.02 2.32 L 2.28 0.58 M 0.48 0.08 N 0.03 0.17 P 0.08 IMPERIAL MIN 0.187 0.146 0.108 0.014 0.023 0.023 0.027 0.027 0.039 0.090 0.019 0.001 0.003 MAX 0.191 0.156 0.112 0.018 0.024 0.024 0.028 0.028 0.040 0.091 0.023 0.003 0.007
A
DirectFET Part Marking
8
www.irf.com
IRF6645
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6645). For 1000 parts on 7" reel, order IRF6645TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MAX MIN MIN CODE MIN MIN MAX MAX MAX N.C 6.9 12.992 A 330.0 177.77 N.C N.C N.C 0.75 B 0.795 N.C 20.2 19.06 N.C N.C N.C 0.53 C 0.504 0.50 12.8 13.5 0.520 12.8 13.2 0.059 D 0.059 1.5 1.5 N.C N.C N.C N.C 2.31 E 3.937 100.0 58.72 N.C N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.47 0.488 12.4 11.9 N.C 0.567 12.01 14.4 H 0.47 0.469 11.9 11.9 N.C 0.606 12.01 15.4
NOTE: CONTROLLING DIMENSIONS IN MM
DIMENSIONS METRIC MIN MAX 7.90 8.10 3.90 4.10 11.90 12.30 5.45 5.55 4.00 4.20 5.00 5.20 1.50 N.C 1.50 1.60
IMPERIAL MAX 0.319 0.161 0.484 0.219 0.165 0.205 N.C 0.063
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/05
www.irf.com
9

▲Up To Search▲

Price & Availability of IRF6645

	To Download IRF6645 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .